X波段大功率GaN HEMT的研制  

Research and Fabrication of X-Band High-Power GaN HEMT

作　　者：宋建博[1] 冯震[1] 王勇[1] 张志国[1] 李亚丽[1] 冯志宏[1] 蔡树军[1] 杨克武[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第6期318-321,共4页Micronanoelectronic Technology

基　　金：国家973资助项目(51327030201)

摘　　要：在研制了AlGaN/GaN HEMT外延材料的基础上,采用标准工艺制作了2.5mm大栅宽AlGaN/GaNHEMT。直流测试中,Vg=0V时器件的最大饱和电流Ids可达2.4A,最大本征跨导Gmax为520mS,夹断电压Voff为-5V;通过采用带有绝缘层的材料结构及离子注入的隔离方式,减小了器件漏电,提高了击穿电压,栅源反向电压到-20V时,栅源漏电在10-6A数量级;单胞器件测试中,Vds=34V时,器件在8GHz下连续波输出功率为16W,功率增益为6.08dB,峰值功率附加效率为43.0%;2.5mm×4四胞器件,在8GHz下,连续波输出功率42W,功率增益8dB,峰值功率附加效率34%。AlGaN/GaN HEMT was obtained by using of our self-grown epitaxial material, 2.5 mm large gateqength AlGaN/GaN HEMT was fabricated by the standard process. The maximum drain current of 2.4 A at a gate bias of 0 V and a peak intrinsic transconductance of 520 mS were achieved, the pinch-off voltage was - 5 V. The leakage current was reduced by using of the insulation material and the ion implantation, the gate-source reverse leakage current was 10^-6 magnitude when the reverse voltage was - 20 V. The single cell device performes the continuous wave output power of 16 W, the power gain of 6. 08 dB and the peak power added efficiency of 42.0% when the operation voltage is 34 V at 8 GHz. The continuous wave output power of 42 W, power gain of 6 dB, peak power added efficiency of 28% at 8 GHz were tested for the 2.5 mm× 4 internally-matched device.

关 键 词：氮化镓基高电子迁移率晶体管 X波段 输出功率 功率增益 功率附加效率 

分 类 号：TN386.2[电子电信—物理电子学] TN323.4