二次退火对P型GaN的应变影响  

Influnce of Second Annealing on the Strain in p-GaN

作　　者：周勋[1] 左长明[1] 邹泽亚[1] 廖秀英[2] 姬洪[1] 罗木昌[2] 刘挺[2] 赵红[2] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054 [2]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2008年第3期374-378,共5页Semiconductor Optoelectronics

摘　　要：采用LP-MOCVD在蓝宝石基片上外延生长了Mg掺杂p-GaN,并对样品进行了退火处理。利用高分辨X射线衍射(HRXRD)对经不同退火时间处理后的样品进行了测试分析,从应变的角度对p型GaN中的杂质和缺陷行为特性进行了分析和探讨。结果表明:p型GaN的应变状态与其退火过程中的杂质和缺陷行为及其最后的电学性能都有着一定的规律性。Mg-doped p-GaN was grown on sapphire by LP-MOCVD, and the samples were annealed. Analysis and measurement were carried out of the samples with different annealing time by the method of high resolution X-ray diffraction （HRXRD）. Meanwhile, the behaviors of the impurities and defects in p-type GaN were discussed according to its strain states. The results show the regularity among the strain states, the behaviors of impurities and defects, and the final electrical performance.

关 键 词：GAN Mg掺杂 退火 应变 HRXRD 

分 类 号：TN304.23[电子电信—物理电子学]