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作 者:孙剑[1] 白亦真[1] 谷建峰[1] 刘明[1] 张庆瑜[1] 姜辛[1]
出 处:《发光学报》2008年第3期455-459,共5页Chinese Journal of Luminescence
基 金:国家自然科学基金资助项目(60307002)
摘 要:采用磁控溅射在自持CVD金刚石厚膜的成核面上制备了ZnO薄膜,并实验研究了其生长特性和发光特性随O2和Ar流量的变化。利用X射线衍射(XRD)、光致发光(PL)光谱、电子探针(EPMA)和霍尔测量对样品进行了检测。结果表明,在O2/Ar比值约为1时沉积得到的ZnO薄膜取向较一致,呈现高阻的状态并且发光性能最好。Recently, there has been an increasing interest in ZnO due to its electrical, optical and piezoelectric properties making suitable for many applications such as light emitting diodes, photodetectors, surface acoustic waves device and so on. SAW filters with working frequency higher than 1 GHz will be widely applied in the intending wireless communication, whereas higher resonant frequencies ( superior to 2.5 GHz) tend to push the limits of conventional photolithography. ZnO/diamond structure as SAW substrates offers an attractive means for relaxation of the li phic criteria since ZnO has excellent piezoelectricity while diamond has the highest elastic and stiff coefficient and highest sound velocity. The use of ZnO based on diamond as SAW substrates offers an attractive means for relaxation of the lithographic criteria since diamond has the highest stiff coefficient and sound velocity. SAW devices have been reported based on ZnO/diamond/Si layered structures with a diamond layer of 10-100μm deposited by chemical vapor deposition (CVD) technique. However the silicon substrate restricts the heat dissipation performance of the diamond films. In regard of actual applications, a ZnO/diamond layered structure without a silicon substrate can make full use of the outstanding thermal, elastic, and sound velocity characteristics of diamond while avoiding restriction of heat dispassion due to additional silicon substrates. High quality ZnO films are currently the foundation of device preparation and the variation of deposition technological parameters is an imoortant factor to obtain ZnO films with high quality.In this paper, ZnO thin films have been prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by reactive radio-frequency magnetron sputtering. With the variation of O2/Ar, the growth and optical properties of the ZnO films are characterized experimentally by X-ray diffraction, room temperature photoluminescence spectra, and electron probe microanalysis and Hall measurements. The
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