半导体技术  

出　　处：《中国学术期刊文摘》2008年第12期159-165,共7页Chinese Science Abstracts(Chinese Edition)

摘　　要：钒掺杂形成半绝缘6H-SiC的补偿机理，氧化Si基Ga2O3／Co薄膜合成GaN纳米线及其表征，高压pLEDMOS器件在不同应力条件下导通电阻的衰退及改进方法，一种新型的基于滑膜阻尼的电容式双向MEMS惯性传感器。A compensation mechanism for semi-insulating 6H-SiC doped with vanadium,Synthesis and characterization of GaN nanorods by ammoniating Ga2O3/Co films deposited on Si（111） substrates,On-resistance degradations under different stress conditions in high voltage pLEDMOS transistors and an improved method,A novel capacitive biaxial microaccelerometer based on the slidefilm damping effect,A novel SPICE macromodel for power ICs

关 键 词：半导体技术 SPICE宏模型 6H-SIC GAN纳米线 GA2O3 MOS器件 惯性传感器 补偿机理 

分 类 号：TN3[电子电信—物理电子学] TN322.4