高兼容CMOS工艺嵌入EEPROM技术  

Embedded EEPROM Technologies Based Standard CMOS Process

作　　者：封晴[1] 徐政[1] 钱宏文[1] 

机构地区：[1]中国电子科技集团公司第五十八研究所,无锡214035

出　　处：《电子与封装》2008年第7期31-33,42,共4页Electronics & Packaging

摘　　要：电可擦除只读存储器是非易失性存储器。文章介绍了高兼容常规CMOS工艺的一种嵌入式电可擦除只读存储器设计与工艺技术,对电可擦除只读存储器单元、高压MOS器件的结构与技术进行了研究。研究结果表明,我们设计的0.8μm电可擦除只读存储器单元Vpp电压在13V￣15V之间能够正常工作,擦写时间小于500μs,读出电流大于160μA/μm;在普通CMOS工艺基础上增加了BN+埋层、隧道窗口工艺,成功应用于含嵌入电可擦除只读存储器的可编程电路的设计与制造。EEPROM is a kind of nonvolatile memory. In this paper we introduce a kind of design and fabrication technique for embedded EEPROM fabricated in high performance CMOS technology. We have also researched the structure and technic of EEPROM cell and high voltage MOS device. The results showed that the 0.8 μ m EEPROM cell which we designed can normally worked at the Vp voltage between 13V- 15V, the program time and erase time is less than 500 μ s, the reading circuit is larger than 160 μ A/μ m. We add N＋ bury layer and tunnel-windows technology on the base of normal CMOS technology, and succeed in using it in the design and manufacture of programmable logic devices being embedded with EEPROM.

关 键 词：非易失性存储器 电可擦除只读存储器 CMOS 工艺 嵌入EEPROM 

分 类 号：TN405[电子电信—微电子学与固体电子学]