GaN基蓝光LED关键技术进展  

Research of Key Technologies for Blue GaN-Based LEDs

作　　者：刘一兵[1] 

机构地区：[1]湖南大学电气与信息工程学院

出　　处：《真空电子技术》2008年第3期34-37,共4页Vacuum Electronics

摘　　要：以高亮度GaN基蓝光LED为核心的半导体照明技术对照明领域带来了很大的冲击,并成为目前全球半导体领域研究和投资的热点。本文首先综述了GaN基材料的基本特性,分析了GaN基蓝光LED制程的关键技术如金属有机物气相外延,P型掺杂,欧姆接触,刻蚀工艺,芯片切割技术,介绍了目前各项技术的工艺现状,最后指出了需要改进的问题,展望了末来的研究方向。Semiconductor lighting technology on high brightness blue GaN-based LEDs impacts illumination field largely, and it has been focus in the semiconductor research and investment at present. This paper was overviewed the basic properties of GaN-based material, analyzed key technologies in making blue GaN-based LEDs, such as MOVPE, P-doping ohmic contact, etching and chip dicing saw, and introduced recent progresses of technologies at present. At last, pointed out problems that we must prospect, and also discussed the future trend.

关 键 词：GAN 蓝光LED 金属有机物气相外延 P型掺杂 欧姆接触 刻蚀 切割 

分 类 号：TN311[电子电信—物理电子学]