快速退火气氛对硅片洁净区和表面形貌的影响  

Effects of Rapid Thermal Annealing Ambient on Denuded Zone and Surface Morphology of Silicon Wafers

作　　者：冯泉林[1] 王敬[2] 何自强[1] 常青[1] 周旗钢[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088 [2]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2008年第4期477-480,共4页Microelectronics

摘　　要：使用N2和N2／NH3混合气氛作为快速热退火（RTA）气氛，研究了RTA气氛对洁净区、氧沉淀和硅片表面形貌的影响。在N2／NH3混合气氛下，RTA处理后，硅片表面出现小坑，同时，微粗糙度增加，后续热处理工艺中会出现薄的洁净区（～10μm）和高密度的氧沉淀。经过N2气氛RTA处理的硅片，表面微粗糙度变化不大，后续热处理中获得较厚的洁净区（≥40μm）和较低的氧沉淀密度。Using N2 and N2/NH3 mixture gas as RTA ambient separately, effects of RTA ambient on distribution of oxygen precipitates and surface morphology were studied. After RTA and following two-step annealing processes, a high density of oxygen precipitates and a thin denuded zone （-10μm） were obtained in wafers treated in N2/NH3 ambient, while a relatively low density of oxygen precipitates and a thick denuded zone （≥40 μm） were observed in N2 ambient. The wafer surface micro-roughness increased drastically and many small pits appeared after N2/NH3 ambient RTA treatment. In contrast, the roughness of wafers in N2 ambient increased only a little.

关 键 词：单晶硅片 洁净区 氧沉淀 内吸杂 快速热退火 

分 类 号：TN304.12[电子电信—物理电子学]