X波段GaN HEMT的研制  

Research on X-Band GaN HEMT

作　　者：王勇[1] 冯震[1] 宋建博[1] 李静强[1] 冯志宏[1] 杨克武[1] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家重点实验室,石家庄050051

出　　处：《半导体技术》2008年第8期677-679,共3页Semiconductor Technology

基　　金：国家973基金资助项目(51327030201)

摘　　要：采用双台面隔离工艺,实现了器件有源区隔离,隔离电压大于250V/10μA。通过对金属化前和介质膜淀积前的预处理过程的改进,实现了较理想的肖特基势垒特性,电压也得到了大幅度提高,理想因子n值小于1.7,源漏击穿电压大于50V/1mA,栅源击穿电压大于40V/1mA,最终实现器件X波段连续波输出功率20W,功率增益7dB,功率密度8W/mm。Isolation between active region had been realized by using double-mesa isolation process, the voltage between mesas was greater than 250 V/10 μA, and ideal Schottky characteristices was obtained by improving the plasma pretreatment before gate metallization and dielectric film deposition. The ideal factor was less than 1.7, the source-drain breakdown voltage was greater than 50 V/1 mA, gate-source breakdown voltage was greater than 40 V/1 mA, and GaN HEMT with 20 W output power in X band and 7 dB power gain was finally obtained, the output power density was 8 W/ram.

关 键 词：氮化镓高电子迁移率晶体管 肖特基势垒 击穿电压 输出功率 

分 类 号：TN386[电子电信—物理电子学]