双层金属电极对硅功率晶体管结温的改善  

Improvement on Junction Temperature of Silicon Power Transistor with Double Layers Metal Electrodes

作　　者：傅义珠[1] 戴学梅[1] 康小虎[1] 盛国兴[1] 叶宗祥[1] 方圆[1] 王因生[1] 王佃利[1] 吴鹏[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2008年第3期383-387,共5页Research & Progress of SSE

摘　　要：通过红外热相分析发现,在直流工作条件下,双层金属电极硅功率晶体管芯片比单层金属电极的结温低10℃以上;在微波工作条件下,双层金属电极芯片的结温比单层金属电极的低43.7℃。试验结果表明,双层金属电极能够改善硅微波功率晶体管芯片内微波输入功率和结温分布的均匀性。This paper presents an improved result for the silicon power transisitor with double layers metal electrodes. The junction temperature in chip of silicon power transistor with double layers metal electrodes is at least 10 ℃ and 43. 7 ℃ lower than that with single layer metal electrode under direct current condition, and under microwave condition, respectively. From the tested infrared ray photograph it is concluded that double layers metal electrodes can improve on the distributing of input microwave power and junction temperature in the silicon power transistor chip.

关 键 词：微波 功率晶体管 结温 热阻 

分 类 号：TN432[电子电信—微电子学与固体电子学]