运用数值模拟技术改进VGF法生长GaAs晶体  

Use of Numerical Modeling for Improved of VGF-growth GaAs Crystals

作　　者：詹琳[1] 苏小平[1] 张峰翊[1] 李金权[1] 

机构地区：[1]北京有色金属研究总院,北京国晶辉红外光学材料有限公司,北京100088

出　　处：《人工晶体学报》2008年第5期1056-1059,共4页Journal of Synthetic Crystals

基　　金：“863”国际重大合作项目(No.2002AAF3102)

摘　　要：在VGF法生长GaAs晶体的过程中固液界面凹向晶体,很容易在坩埚圆锥面处生长多晶。本文采用专业晶体生长模拟软件CrysVUn对实验温场进行了计算机模拟并提出改进方案,把底加热器取消并在坩埚底部加入氦气冷源,底部结构类似于热交换法系统。这样改变热场结构,得到凸向熔体的固液界面。It was found that the solid-liquid interface was concave to the crystal during the VGF growth GaAs crystals and it is easy to grow polycrystal at the taper face of crucible. Therefore, experimental thermal field was simulated by using the professional crystal simulation CrysVUn software and an improved project was proposed. The bottom structure is similar to heat exchange system, namely, canceling the bottom heater and affiliating He. Solid-liquid interface which was convex to the crystal was obtained through such change of the structure of thermal field.

关 键 词：数值模拟 VGF法 固液界面 GAAS 

分 类 号：O795[理学—晶体学]