碱性抛光液对硬盘基板抛光中表面状况的影响  

Effect of Alkaline Slurry on the Surface State of the Hard Disk

作　　者：唐文栋[1] 刘玉岭[1] 宁培桓[1] 田军[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《微纳电子技术》2008年第10期611-614,618,共5页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(10676008);高等学校博士学科点专项科研基金(20050080007);河北省教育厅科学研究计划项目(2007429);天津市自然科学基金科技展计划项目(0438014211)

摘　　要：阐述了化学机械抛光(CMP)技术在硬盘基板加工中发挥的重要作用,介绍了SiO2碱性抛光液的化学机械抛光机理以及抛光液在化学机械抛光中发挥的重要作用。使用河北工业大学研制的SiO2碱性抛光液对硬盘基板表面抛光,分析研究了抛光液中的浓度、表面活性剂以及去除量对抛光后硬盘基板表面状况的影响机理。总结了硬盘基板表面粗糙度随抛光液中的浓度、表面活性剂及去除量的变化规律以及抛光液的这些参数如何影响到硬盘基板的表面状况。在总结和分析这些规律的基础上,对抛光结果进行了检测。经检测得出,改善抛光后的硬盘基板表面质量(Ra=0.3926nm,Rrms=0.4953nm)取得了显著效果。Chemical mechanical polishing （CMP） technology which plays an important role in the hard disk substrate processing was discribed. The CMP mechanism of alkaline slurry with SiO2 and the importance of slurry in CMP were introduced. By polishing the hard disk substrate using the alkaline slurry with SiO2 of Hebei University of Technology, the influence mechanisms of the concentration of alkaline slurry, the surfactant and the removed thickness on the hard disk substrate surface situation after polishing were studied. The variation law of the surface roughness of the hard disk substrate with the concentration of alkaline slurry, the surfactant and the removed thickness, and how these slurry parameters affect the hard disk substrate surface situa- tion were summarized. On the basis of these, the polishing results were tested. The test shows that the hard disk substrate surface quality after polishing （Ra = 0. 392 6 nm, Rrms = 0. 495 3 nm） achieves significant effect.

关 键 词：硬盘基板 化学机械抛光 抛光液 粗糙度 波纹度 平整度 

分 类 号：TN305.2[电子电信—物理电子学] TN304.21