基于InP衬底的应变和应变补偿的InGaAs/InAlAs材料的高分辨X射线衍射分析(英文)  

High resolution X-ray diffraction analyze of InP-based strained and strain-compensated InGaAs/InAlAs materials

作　　者：梅斌[1] 徐刚毅[1] 李爱珍[1] 李华[1] 李耀耀[1] 魏林[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2008年第5期889-894,共6页Journal of Functional Materials and Devices

摘　　要：高分辨率X射线衍射技术被用来分析基于InP衬底的应变的InGaAs和InAlAs单层材料和应变补偿的InGaAs/InAlAs超晶格材料。通过倒空间mapping得到的单层材料的错向角大约为10-3度,可以忽略不计。通过摇摆曲线得到了单层材料的组分和体失配度,接着单层材料的结果被用来分析在相同的条件下利用MBE技术生长的超晶格材料。利用倒空间mapping精确得到了超晶格的平均垂直失配度和各层的厚度,通过X射线模拟软件得到的超晶格材料的模拟曲线和实测曲线吻合的很好。High resolution x - ray diffraction （HRXRD） is used to analyze the structure of InP - based single -layer InGaAs and InAlAs materials and strain -compensated InGaAs/InAlAs superlattice material. The calculated value of the misorientation - angle of single - layer materials according to the reciprocal space mapping is about 10^-3 degree and it can be neglected. Then the composition and bulk mismatch of the single - layer materials are obtained through the rocking curves. The ：results of the single - layer materials are then used to analyze the superlattice material grown under the same conditions with molecule beam epitaxy （MBE） technology. The average perpendicular mismatch and the thickness of the superlatrice are obtained accurately from the reciprocal space mapping. The simulated curve of the superlattice material through the x -ray simulation software matches veby well with the measured curve.

关 键 词：高分辨X射线衍射 InGaAs INALAS 错向角 摇摆曲线 倒空间mapping 

分 类 号：O4-34[理学—物理]