集成电路Cu互连线的XRD研究  

XRD Study on Cu Layer in IC Interconnect

作　　者：徐赛生[1] 曾磊[1,2] 张立锋[1] 顾晓清[1] 张卫[1] 汪礼康[1] 

机构地区：[1]复旦大学微电子学系,复旦-诺发互连研究中心,上海200433 [2]罗门哈斯电子材料(上海)有限公司,上海200233

出　　处：《半导体技术》2008年第11期985-987,共3页Semiconductor Technology

基　　金：国家自然科学基金项目(60176013);上海市科委AM基金(0304)

摘　　要：对硫酸盐体系中电镀得到的Cu镀层,使用XRD研究不同电沉积条件、不同衬底和不同厚度镀层的织构情况和择优取向。对比了直流电镀和脉冲电镀在有添加剂和无添加剂条件下的织构情况。实验结果表明,对于在各种条件下获得的1μm Cu镀层,均呈现(111)晶面择优,这样的镀层在集成电路Cu互连线中有较好的抗电迁移性能。The Cu rims with different electrodeposited conditions, substrates and thickness were electrodeposited in sulphate electrolyte. The texture coefficient and preferred orientation of Cu film were investigated by XRD （X-ray diffraction）. The texture coefficient condition of DC plating and pulse plating with additive or not were compared. The results show that for the 1 μm Cu film obtained at different conditions presents （111） preferred orientation in most cases, which would be propitious to interconnect in ULSI for its good properties in electromigration resistance.

关 键 词：铜互连 X射线衍射 织构系数 择优取向 添加剂 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]