氮气流量对玻璃衬底上低温沉积GaN薄膜结晶性的影响  

Influences of N_2 Flow Rate on the Crystalline Characteristics of GaN Films Deposited on Glass Substrate at Low Temperature

作　　者：王文彦[1] 秦福文[1] 吴爱民[1] 宋世巍[1] 刘瑞贤[1] 姜辛[1] 徐茵[1] 顾彪[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024

出　　处：《Journal of Semiconductors》2008年第12期2376-2380,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60476008)~~

摘　　要：采用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在康宁7101型普通玻璃衬底上沉积了高度c轴择优取向的多晶GaN薄膜.利用反射高能电子衍射(RHEED),X射线衍射(XRD)对样品进行检测,研究了在低温(430℃)沉积中氮气流量对GaN薄膜结晶性的影响.并且利用原子力显微镜(AFM)和室温光致发光(PL)谱研究了薄膜的表面形貌和发光特性,发现薄膜表面形貌较为平整,其发光峰由较强的紫外近带边发光峰和极其微弱的绿光发光峰组成.High c-axis oriented GaN films have been deposited on corning 7101 glass substrate by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition （ECR-PEMOCVD） at low temperature. Influences of N2 flow rate on the crystal-line characteristics of the GaN films were investigated by reflection high energy electron diffraction （RHEED） in situ and X-ray diffraction （XRD）. And the surface morphology and the optical properties of the GaN film were studied using atomic force microscope （AFM） and room temperature photoluminescence （PL） spectra. The results show that the surface morphology of the GaN film is smooth and its optical peaks are composed of a stronger ultraviolet near band emission and a rather weak green emission.

关 键 词：ECR—PEMOCVD GAN薄膜 结晶性 半导体材料 低温沉积 玻璃衬底 

分 类 号：TN304.23[电子电信—物理电子学]