SiN钝化前的NF_3等离子体处理对AlGaN/GaN HEMT性能的影响  

Effects of NF_3 Plasma Treatment Prior to SiN Passivation on the Characteristics of AlGaN/GaN HEMTs

作　　者：任春江[1] 陈堂胜[1] 焦刚[1] 陈刚[1] 薛舫时[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家重点实验室,南京210016

出　　处：《Journal of Semiconductors》2008年第12期2385-2388,共4页半导体学报（英文版）

摘　　要：研究了Si N钝化前利用感应耦合等离子体(ICP)对Al GaN/GaN HEMT表面进行NF3等离子体处理对器件性能的影响.结果表明,运用低能量的NF3等离子体处理钝化前的Al GaN/GaN HEMT表面能有效抑制器件电流崩塌,而器件直流及微波小信号特性则未受影响.微波功率测试表明,经过6min NF3等离子体处理的Al GaN/GaN HEMT在2GHz,30V工作电压下达到6.15W/mm的输出功率密度,而未经过处理的器件只达到1.82W/mm的输出功率密度.NF3 plasma surface treatment in inductively coupled plasma （ICP） system prior to SiN passivation on the characteristics of AlGaN/GaN HEMTs has been studied. The results show that current collapse is effectively suppressed while DC and RF performance is not affected for the AlGaN/GaN HEMTs with low power NF3 plasma treated. The AlGaN/GaN HEMT with 6 minutes NF3 plasma treated reaches a power density of 6.15W/mm at 2GHz and 30V operating voltage while the device without NF3 plasma treated only gets an output power density of 1.82W/mm.

关 键 词：ALGAN/GAN 高电子迁移率晶体管 电流崩塌 NF3等离子体处理 

分 类 号：TN386[电子电信—物理电子学]