SiC衬底AlGaN/GaN HEMT的ICP通孔刻蚀  

Inductively Coupled Plasma via Hole Etching of AlGaN/GaN HEMTs on SiC Substrate

作　　者：任春江[1] 陈堂胜[1] 柏松[1] 徐筱乐[1] 焦刚[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家重点实验室,南京210016

出　　处：《Journal of Semiconductors》2008年第12期2408-2411,共4页半导体学报（英文版）

摘　　要：利用ICP对研制的SiC衬底上Al GaN/GaN HEMT刻蚀获得了深度为50μm的接地通孔.器件通孔制作前首先用机械研磨的方法将衬底减薄至50μm,在背面蒸发Ti/Ni并电镀Ni至3μm作为刻蚀阻挡层;之后利用SF6/O2混合气体的电感耦合等离子体对SiC衬底进行了刻蚀;最后将Cl2和BCl3混合气体的ICP刻蚀技术运用于Al GaN/GaN外延材料的刻蚀,完成了深度为50μm的Al GaN/GaN HEMT通孔制作,通孔侧壁具有一定的斜率,适合良好的金属覆盖以形成器件正面和背面的连接.这一技术非常适合Al GaN/GaN HEMT及其单片集成电路的研制.AlGaN/GaN HEMTs on SiC substrate were fabricated and through-wafer via holes up to 50μm deep were etched by inductively coupled plasma （ICP）. The SiC substrate was thinned to 50μm, and 3μm thick Ni mask with openings was patterned followed by SF6/O2 gas mixture etching of SiC substrate. Through-wafer via holes with a slightly sloped via sidewall to facilitate subsequent metal coverage to complete the front-to-back electrical connection were finished by Cl2/BCl3 gas mixture based ICP etching of AlGaN/ GaN heterostructure. The method exhibited is suitable for AlGaN/GaN HEMTs and MMICs fabrication.

关 键 词：碳化硅 六氟化硫 电感耦合等离子体刻蚀 半导体器件 

分 类 号：TN386[电子电信—物理电子学]