反应磁控溅射法制备HfO_2金刚石红外增透膜  

Reactive Magnetron Sputtering of IR Anti-reflection HfO_2 Coatings for Freestanding CVD Diamond Window Applications

作　　者：郭会斌[1] 王凤英[1] 贺琦[1] 魏俊俊[1] 王耀华[1] 吕反修[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《人工晶体学报》2008年第6期1355-1360,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50572007);教育部博士点基金(No.20040008018)

摘　　要：采用纯铪(Hf)金属靶,在氧+氩反应气氛中进行了HfO2薄膜直流反应磁控溅射沉积。首先在单晶硅片上沉积薄膜,研究工艺参数改变对薄膜的影响,然后选择较优的工艺在金刚石表面沉积符合光学厚度的薄膜,达到增透减反射效果。利用X射线光电子能谱(XPS)研究了O2/Ar比例对薄膜组成的影响。利用X射线衍射仪(GIXRD)和椭偏仪(Ellipsometer)研究了不同衬底温度对氧化铪薄膜组织结构和光学性能的影响。采用傅立叶红外光谱仪(FTIR)检测了镀膜前后金刚石红外透过性能,发现双面镀制HfO2薄膜能够有效提高金刚石在8～12μm的红外透过性能,在8μm处最大增透可达21.6%,使金刚石红外透过率达到88%;在3～5μm范围,双面镀制了HfO2薄膜的金刚石平均透过率达66.8%,比没有镀膜的金刚石在该处的平均透过率54%高出12.8%。Hafnium dioxide （HfO2） thin films were prepared by direct current reactive magnetron sputtering with high purity Hf target in Ar/O2 mixtures. The effect of O2 working pressure on HfO2 film deposition was studied by XPS. The optical performance and the structure of the as-deposition HfO2 thin films at different deposition temperatures were characterized by EUipsometry and XRD. The IR transmittance of the freestanding diamond film sample was increased to 88% at the most after depositing HfO2 films in the 8-12μm IR wavelength range; whilst the average IR transmittance of the diamond film sample rose from 54% to 66.8% in the 3-5 μm mid-IR wavelength range.

关 键 词：HFO2薄膜 反应磁控溅射法 红外透过率 增透 

分 类 号：O484[理学—固体物理]