AlGaN/GaN HEMTs器件布局对器件性能影响分析  

Performance of AlGaN/GaN HEMTs with Different Layout

作　　者：刘果果[1] 魏珂[1] 郑英奎[1] 刘新宇[1] 和致经[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2008年第6期1769-1771,1775,共4页Chinese Journal of Electron Devices

基　　金：国家重点基础研究发展计划资助项目(2002CB311903);中国科学院重点创新资助项目(KGCX2-SW-107)

摘　　要：比较了空气桥跨细栅和空气桥跨栅总线两种源连接结构的1 mm AlGaN/GaN HEMTs器件的特性,对两种结构的管芯进行了等效电路参数提取。测试了两种布局方式下的不同源场板结构器件的射频以及功率性能,比较分析表明,空气桥跨细栅的源连接方式由于有效地降低了栅漏电容以及栅源电容,比空气桥跨栅总线源连接的器件能取得更好的频率特性以及功率特性。This article compared two methods of source-conncted strctures of 1 mm AlGaN/GaN HEMTs. airbridge over single gates and airbridge over gate-bus. Extrinsic capacitance parameters were both extrac- ted, the rf characteristics and power characteristics of source-connected field-plate devices AIGaN/GaN HEMTs were both measured. Due to the lower gate-drain capacitance and gate-source capacitance, the de- vice with airbridge over single gates performed well rf characteristics and power characteristics.

关 键 词：ALGAN/GAN HEMT 器件布局 寄生参数 空气桥 

分 类 号：TN325.3[电子电信—物理电子学]