直流和脉冲电镀Cu互连线的性能比较  

Properties Comparison of Electrodeposited Copper Interconncet Line by DC and Pulse Plating

作　　者：徐赛生[1] 曾磊 张立锋[1] 张卫[1] 汪礼康[1] 

机构地区：[1]复旦大学微电子学系复旦-诺发互连研究中心,上海200433 [2]罗门哈斯电子材料上海有限公司,上海201203

出　　处：《半导体技术》2008年第12期1070-1073,共4页Semiconductor Technology

基　　金：国家自然科学基金项目(90607019);上海市科委AM基金(0304)

摘　　要：针对先进纳米Cu互连技术的要求,比较了直流和脉冲两种电镀条件下Cu互连线的性能以及电阻率、织构系数、晶粒大小和表面粗糙度的变化。实验结果表明,在相同电流密度条件下,脉冲电镀所得Cu镀层电阻率较低,表面粗糙度较小,表面晶粒尺寸和晶粒密度较大,而直流电镀所得镀层(111)晶面的择优程度优于脉冲。在超大规模集成电路Cu互连技术中,脉冲电镀将有良好的研究应用前景。Aiming at the technology demand of advanced copper interconnect, the properties of electrodeposited copper film and parameters such as resistivity, texture coefficient, grain size and surface roughness were investigated by DC plating and pulse plating respectively. The results show that at the same current density conditions, the Cu film deposited by pulse plating has lower resistivity, lower surface roughness, larger grain size and grain density, but the Cu film deposited by DC plating has better （111） preferential orientation than by pulse plating. In copper interconnect technology of ULSI, pulse plating may have a good potential prospect application.

关 键 词：CU互连 电沉积Cu层 脉冲电镀 直流电镀 

分 类 号：TN405.97[电子电信—微电子学与固体电子学]