中波-长波双色量子阱红外探测器  

Mid-Wavelength and Long-Wavelength Two-Color Quantum Well Infrared Photodetectors

作　　者：赵永林[1] 李献杰[1] 刘英斌[1] 齐利芳[1] 过帆[1] 蔡道民[1] 尹顺政[1] 刘跳[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2008年第12期689-693,共5页Micronanoelectronic Technology

基　　金：电子支撑项目资助(41501070402)

摘　　要：采用n型掺杂的AlGaAs/GaAs和AlGaAs/InGaA多量子阱材料,基于MOCVD外延生长技术,利用成熟的GaAs集成电路加工工艺,设计并制作了不同结构的中波-长波双色量子阱红外探测器(QWIP)器件,器件采用正面入射二维光栅耦合,光栅周期设计为4μm,宽度2μm;对制作的500μm×500μm大面积双色QWIP单元器件暗电流、响应光谱、探测率进行了测试和分析。在-3V偏压、77K温度和300K背景温度下长波(LWIR)和中波(MWIR)QWIP的暗电流密度分别为0.6、0.02mA/cm2;-3V偏压、80K温度下MWIR和LWIR QWIP的响应光谱峰值波长分别为5.2、7.8μm;在2V偏压、65K温度下,LWIR和MWIR QWIP的峰值探测率分别为1.4×1011、6×1010cm.Hz1/2/W。Based on MOCVD epitaxy technique using n-doped AlGaAs/GaAs and AlGaAs/ InGaAs multiple quantum well material, the different structures for mid-wavelength and long- wavelength two-color quantum well infrared photodetectors （QWIPs） were designed and fabrica- ted with the mature process of GaAs ICs. The devices were achieved with the front-illuminated 2D grating coupling. The grating period and the grating width were 4 μm and 2 μm, respectively. The performances of the dark current, responsivity spectrum and detectivity were measured and analyzed for a test device structure with a large size of 500 μm × 500 μm. At a bias of - 3 V and an operating temperature of 77 K with a background temperature of 300 K, the dark current densities of LWIR and MWIR QWIPs are 0. 6 mA/cm2 and 0. 02 mA/cm2 , respectively. At a bias of - 3 V and an operating temperature of 80 K, the peak wavelengths of responsivity spectra are 5.2μm and 7.8 μm, respectively. At a bias of - 2 V and an operating temperature of 65 K, the peak detectivities are 1.4 ×10^11 cm · Hz1/2/W and 6 ×10^10 cm · Hz1/2/W,respectively.

关 键 词：量子阱红外探测器 双色 暗电流密度 响应光谱 探测率 二维光栅 

分 类 号：TN304.23[电子电信—物理电子学] TN362