PECVD法低温制备纳米晶硅薄膜晶化特性的Raman分析  

Raman analysis of crystalline properties of nano-crystalline silicon thin films prepared at low temperature by PECVD technique

作　　者：邱胜桦[1] 陈城钊[1] 刘翠青[1] 吴燕丹[1] 李平[1] 林璇英[1,2] 

机构地区：[1]韩山师范学院物理与电子工程系,广东潮州521041 [2]汕头大学物理系,广东汕头515063

出　　处：《材料研究与应用》2008年第4期428-431,共4页Materials Research and Application

基　　金：韩山师范学院扶持基金资助的课题(FC200508)

摘　　要：以SiH4与H2为气源,采用射频等离子体增强化学气相沉积技术,在较低的温度(200℃)和较高的压强(230 Pa)下,在普通的玻璃衬底上制备出沉积速率达8×10-10m/s,晶化率大于60%的纳米晶硅薄膜.利用Raman谱分析硅烷浓度和射频功率对纳米晶硅薄膜的晶化特性的影响.结果表明,薄膜的晶化率、沉积速率与硅烷浓度和射频功率存在着密切的关系.随着硅烷浓度的降低,即氢稀释率的提高,晶化率提高,而沉积速率随着射频功率的增大而增大.当硅烷体积浓度为1%、射频功率为70 W时,获得晶化率接近70%的优质纳米晶硅薄膜.Nano-crystalline silicon films with deposition rate of 8× 10^-10m/s and crystalline fraction higher than 60% were prepared from SiH4 diluted with hydrogen by plasma enhanced chemical vapor deposition at low temperature （200℃） and high pressure （230Pa）. The effect of silicane concentration and rf power on their growth rate and crystalline properties were investigated with Raman spectra. The experimental results indicate that the crystalline fraction and deposition rate are in close relation with silicane concentration and rf power. The crystalline fraction and grain size increase with decreasing the silicane concentration, and deposition rate increase with increasing the rf power. The thin films with crystalline fraction near to 70% were prepared under silicane concentration at 1 % and rf power at 70W.

关 键 词：纳米晶硅薄膜 晶化率 RF-PECVD RAMAN谱 

分 类 号：O484.4[理学—固体物理] O471.4[理学—物理]