SiCl_4/H_2为气源低温沉积多晶硅薄膜光电特性的研究  

Study on photoelectrical properties of polycrystalline silicon thin films deposited at low temperatures using SiCl_4/H_2

作　　者：刘丽娟[1,2] 罗以琳[1] 林璇英[1] 

机构地区：[1]汕头大学物理系,广东汕头515063 [2]深圳市宇光高科新能源技术有限公司,广东深圳518116

出　　处：《材料研究与应用》2008年第4期437-440,共4页Materials Research and Application

基　　金：国家重点基础研究发展规划项目资助的课题(G2000028208)

摘　　要：采用PECVD技术,通过改变射频功率制备了晶化率不同的多晶硅薄膜.对多晶硅材料光照稳定性的研究表明,晶化率较低的多晶硅稳定性好于普通非晶硅材料,但仍然存在着光衰减;晶化率较高的多晶硅材料显示出稳恒光电导效应,不存在光衰退现象;光照时多晶硅材料的电导率增加,光注入后因光生载流子对缺陷态的填充使费米能级上移,激活能减小.Poly-silicon thin films material with different crystalline ratio （Xo） have been deposited with varying power in the PECVD process. Based on the study of the illumination stability of polycrystalline silicon material with different crystallization rate, the relationship between the optoelectronic properties and the microstructure of the material was analyzed. The results showed that though the polysilicon film with lower crystallization rate still had light soaking degradation effect, it had better illumination stability than general amorphous silicon materials. Polysilicon material with high crystallization rate showed persistent photoconductivity effect. For all the samples, their conductivity increased when they were in light soaking. Their Fermi levels moved upward as the defect states were filled by light generated carriers. As a resuit, their activation energies decreased.

关 键 词：多晶硅薄膜 持续性光电导 晶化率 

分 类 号：O484.3[理学—固体物理]