金刚石薄膜在多晶铜和磷脱氧铜基片上的生长  

DIAMOND FILMS GROWTH ON POLYCRYSTALLINE Cu AND PHOSPHORUS DEOXIDIZED Cu *

作　　者：韩祀瑾[1] 陈金松[1] 方容川[1] 尚乃贵[1] 邵庆益[1] 乐德芬[1] 廖源[1] 叶祉渊[1] 易波[1] 崔景彪[1] 

机构地区：[1]中国科学技术大学物理系

出　　处：《物理学报》1998年第4期686-691,共6页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：分别采用９９．９９％的多晶铜片和９９．９５％的磷脱氧铜片作为沉积金刚石薄膜的基片，通过热丝化学汽相沉积法在两种基片上都获得了大面积、自支撑的多晶金刚石膜．使用高分辨率光学显微镜、扫描电子显微镜、Ｒａｍａｎ光谱和Ｘ射线衍射比较分析了两种铜基片上的金刚石膜．脱氧铜上的金刚石膜质量并不亚于多晶铜上的金刚石膜，而且它的成核密度、生长速率以及应力都高于多晶铜上金刚石膜的同类参数．Abstract Two kinds of Cu substrates were used to grow diamond films,one of them being 99.99% polycrystalline Cu foil and the other 99.95% phosphorus deoxidized Cu foil.Large area,free standing polycrystalline diamond films were obtained by hot filament CVD on both substrates.The diamond films on the two kinds of Cu substrates were comparatively investigated by high resolution optical microscopy,scanning electron microscopy,Raman spectroscopy,and X ray diffraction.The quality of films on deoxidized Cu are not worse than that on polycrystalline Cu,while the nucleation densities ,growth rate and stress in film on deoxidized Cu is higher than those on polycrystalline Cu.It is indicated that the annealing process and optimized growth conditions must be used to obtain large area continuous diamond films.

关 键 词：多晶铜 磷脱氧铜 金刚石 薄膜生长 

分 类 号：TB43[一般工业技术] O613.71[理学—无机化学]