高频4H-SiC双极晶体管的研制  

Study of High Frequency 4H-SiC Bipolar Junction Transistor

作　　者：田爱华[1] 崔占东[1] 赵彤[1] 刘英坤[1] 

机构地区：[1]河北半导体研究所,石家庄050051

出　　处：《半导体技术》2009年第1期58-61,共4页Semiconductor Technology

基　　金：国家重点基础研究发展规划资助项目(2002CB311904)

摘　　要：研制出国内第一个高频4H-SiC双极晶体管。该器件采用了双台面结构和叉指结构,室温下的最大直流电流增益(β)为3.25,集电结击穿电压BVCBO达200 V。器件的β随温度的升高而降低,具有负的温度系数,这种特性使该器件容易并联,避免出现热失控现象。器件的高频特性由矢量网络分析仪测量得到,截止频率fT为360 MHz、最高振荡频率fmax为160 MHz。The first high frequency 4H-SiC bipolar junction transistor made in China was reported. The device with double mesa and comb structures shows the biggest DC current gain of 3.25, and open-emitter collector base breakdown voltage （ BVCBO） of 200 V at room temperature. The current gain decreases with increasing temperature, which makes the device attractive for paralleling and preventing thermal runaway. The device has fT of 360 MHz and fmax of 160 MHz, which are obtained with vector network analyzer.

关 键 词：4H-碳化硅 双极晶体管 电流增益 截止频率 

分 类 号：TN325.3[电子电信—物理电子学] TN322.8