高介电常数HfO_2栅介质的制备及性能  

Preparation and Property of High-k HfO_2 Gate Dielectric Materials

作　　者：薛原[1] 徐赛生[1] 董琳[1] 丁士进[1] 张卫[1] 

机构地区：[1]复旦大学微电子学系,上海200433

出　　处：《半导体技术》2009年第2期127-130,共4页Semiconductor Technology

基　　金：国家自然科学基金项目(60628403;60776017)

摘　　要：氧化铪(HfO2)介质材料是目前用来取代SiO2的最有前途材料之一。介绍了HfO2的制备方法,对几种制备方法进行了比较,并分析了各种制备方法的优缺点。比较了HfO2介质材料的电学性能、热稳定性能及可靠性能,综述了HfO2介质材料的前景,指出原子层淀积(ALD)是制备HfO2介质材料的最好方法之一。HfO2 is one of the most promising materials instead of SiO2, how to make HfO2 is introduced, various ways for making the material were compared, and the advantages and disadvantages are analyzed. The electricity performance of HfO2 dielectrolics materials is described. Heat stability, reliability property are compared. It reveals that atomic layer deposition （ALD） is one of best method for making HfO2 dielectric materials.

关 键 词：氧化铪 介质材料 原子层淀积 

分 类 号：TN304[电子电信—物理电子学]