P波段脉冲输出150W高增益功率晶体管  

p-band High Gain Power Transistor with 150 W Pulsed Output

作　　者：王因生[1] 单宁[1] 王佃利[1] 林川[1] 张树丹[1] 康小虎[1] 林金庭[1] 

机构地区：[1]南京电子器件研究所,210016

出　　处：《固体电子学研究与进展》1998年第1期15-19,共5页Research & Progress of SSE

摘　　要：采用微波功率管二次发射极镇流和掺砷多晶硅发射极覆盖树枝状结构等新工艺技术，研制出用于工程的实用化P波段脉冲大功率晶体管。该器件由16个单胞内匹配而成，在该频带内，脉宽500μs，占空比15％，脉冲输出150W，增益大于10dB，集电极效率大于50％。Using the novel technologies such as so-called dual emitter ballastingof microwave power transistor and As-doped polysilicon emitter tree overlay structure, the practicable pulsed power transistor used for engineering has beendeveloped. The transistor is a 16-cell device with peak output power of 150 W at500 μs pulse width, 15 percent duty cycle, high gain of 10 dB and 50 percent collector output efficcncy over a (540-610) MHz band.

关 键 词：二次发射极镇流 多晶硅发射极 微波功率晶体管 

分 类 号：TN323.4[电子电信—物理电子学]