中性(NH_4)_2S溶液钝化GaAs(100)表面的研究  

INVESTIGATION OF NEUTRALIZED (NH 4) 2S SOLUTION PASSIVATED GaAs(100) SURFACES

作　　者：袁泽亮[1] 丁训民[1] 胡海天[1] 李哲深[1] 杨建树[1] 缪熙月[1] 陈溪滢[1] 曹先安[1] 侯晓远[1] 陆尔东[2] 徐世红 徐彭寿 张新夷 

机构地区：[1]复旦大学应用表面物理国家重点实验室 [2]中国科学技术大学国家同步辐射实验室

出　　处：《物理学报》1998年第1期68-74,共7页Acta Physica Sinica

基　　金：国家教育委员会跨世纪人才培养计划;国家杰出青年科学基金

摘　　要：采用同步辐射光电子能谱（ＳＲＰＥＳ）结合扫描电子显微镜（ＳＥＭ）和称量法，研究了中性（ＮＨ４）２Ｓ溶液钝化ＧａＡｓ（１００）表面，并与常规（ＮＨ４）２Ｓ碱性溶液钝化方法进行了比较．ＳＲＰＥＳ结果表明该处理方法可以产生较厚的Ｇａ硫化物层和较强的Ｇａ—Ｓ键，Ｇａ的硫化物有好的稳定性．称量法表明该方法有更低的腐蚀速率．ＳＥＭ结果表明该方法钝化处理的ＧａＡｓ表面所产生的腐蚀坑数目少，直径小．Abstract Synchrotron radiation photoelectron spectroscopy (SRPES) combined with scanning electron microscopy (SEM) and gravimetric method is used to study the neutralized (NH 4) 2S passivated GaAs(100) surfaces. Compared to the conventional (NH 4) 2S alkaline solution treatment, a thicker Ga sulfide layer and stronger Ga—S bonding on GaAs surface can be formed by dipping GaAs in neutralized (NH 4) 2S solution. Gravimetric data show that the etching rate of GaAs in neutralized (NH 4) 2S solution is about 15% lower than that in the conventional (NH 4) 2S solution. From SEM observation, only fewer number of etching pits with smaller size on the neutralized (NH 4) 2S treated GaAs surfaces can be found.

关 键 词：SEM 表面钝化 砷化镓 中性硫化铵溶液 

分 类 号：TN304.23[电子电信—物理电子学] TN305.2