微波等离子体化学汽相沉积法沉积CN_x膜的研究  

STUDIES OF CN x FILMS DEPOSITED BY MEANS OF MICROWAVE PLASMA CVD METHOD

作　　者：辛煜[1] 范叔平[1] 狄国庆[1] 沈明荣[1] 甘肇强[1] 

机构地区：[1]苏州大学物理系

出　　处：《物理学报》1998年第1期154-159,共6页Acta Physica Sinica

摘　　要：对用微波等离子体化学汽相沉积法沉积在Ｓｉ基片上的ＣＮｘ膜分别进行Ｒａｍａｎ散射、Ｘ射线光电子能谱、Ｘ射线衍射和扫描电子显微镜等技术的分析与测试．Ｒａｍａｎ散射的研究结果表明在ＣＨ４与Ｎ２的流量比低于１∶８时，ＣＮｘ膜的散射谱中以非晶石墨峰的形式出现．当流量比为１∶８时，则表现为较尖锐的Ｃ≡Ｎ键（２１９０ｃｍ－１）的特征峰；从Ｘ射线光电子能谱的分析结果可以看出Ｃ，Ｎ成键的方式主要是Ｃ≡Ｎ键和Ｃ—Ｎ键，但Ｘ射线衍射谱中并没有对应于βＣ３Ｎ４相的衍射峰出现；气压对膜的沉积速率有影响．Abstract CN x films deposited on Si substrates with microwave plasma chemical vapor deposition method are measured and analyzed using Raman scattering,X ray photoelectron spectrum,X ray diffraction and scanning electron microscopy techniques.The result of Raman spectrum shows the amorphous graphite peak around 1600cm -1 with the flow ratio of CH 4 and N 2 below 1∶8.As the flow ratio is equal to 1∶8,a characteristic peak around 2190cm -1 exists,which represents C≡N bond. According to the XPS results,the binding pattern of C and N are seen to be of C—N bond and C≡N bond.There is no diffraction peaks corresponding to β C 3N 4 phase in the XRD pattern.The gas pressure has influence on the deposited rate of the film.

关 键 词：MWPCVD 薄膜沉积 微波等离子体 CVD CN膜 

分 类 号：O484.1[理学—固体物理]