磁控溅射AlN介质的14W/mm AlGaN/GaN MIS-HEMT  

14 W/mm AlGaN-GaN MIS-HEMTs with Magnetron Sputtered AlN Dielectric as Gate Insulator

作　　者：任春江[1] 陈堂胜[1] 焦刚[1] 耿涛[1] 薛舫时[1] 陈辰[1] 

机构地区：[1]南京电子器件研究所单片集成电路与模块国家重点实验室,南京210016

出　　处：《中国电子科学研究院学报》2009年第2期157-160,共4页Journal of China Academy of Electronics and Information Technology

摘　　要：介绍了一种采用磁控溅射AlN介质作为绝缘层的的SiC衬底AlGaN/GaN MIS-HEMT。器件研制中采用了凹槽栅和场板结构。采用MIS结构后,器件击穿电压由80V提高到了180V以上,保证了器件能够实现更高的工作电压。在2GHz、75V工作电压下,研制的200μm栅宽AlGaN/GaN MIS-HEMT输出功率密度达到了14.4W/mm,器件功率增益和功率附加效率分别为20.51dB和54.2%。An AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors （MIS- HEMTs） with magnetron sputtered AlN dielectric as gate insulator, manufactured on a semi-insulating SiC substrate is introduced in this paper. Gate recessing technique and field plate structure are both applied in this design. With the application of MIS configuration on a gate recessed AlGaN/GaN HEMT with field plate, breakdown voltage is raised from 80 V to over 180 V, leading to an improvement in operating voltage. At 2 GHz and 75 V operating voltage, the 200 μm gate width AlGaN/GaN MIS-HEMT thus designed demonstrates an output power density of 14.4 W/mm with 20.51 dB power gain and 54.2% power added efficiency （PAE）.

关 键 词：ALGAN/GAN 高电子迁移率晶体管 MIS 电流崩塌 

分 类 号：TN386[电子电信—物理电子学]