High Performance SLED Fabricated by Pulsed Anodic Oxidation  

作　　者：高欣 薄报学 张晶 李辉 曲轶 

机构地区：[1]National Key Lab on High Power Semiconductor Lasers,Changchun University of Science and Technology

出　　处：《Defence Technology（防务技术）》2009年第1期47-51,共5页Defence Technology

基　　金：Sponsored by the National Nature Science Foundation of China(60474026,60477010)

摘　　要：InGaAs/AlGaAs MQW superluminescent LED(SLED) is fabricated by using pulsed anodic oxidation and molecular beam epitaxy(MBE).The power and spectral output characteristics of three kinds of device structures are investigated.An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.InGaAs/AlGaAs MQW superluminescent LED （SLED） is fabricated by using pulsed anodic oxidation and molecular beam epitaxy （MBE）. The power and spectral output characteristics of three kinds of device structures are investigated. An output power above 10 mW with FWHM of 18 nm is demonstrated at a current of 150 mA.

关 键 词：脉冲阳极氧化 高性能材料 超辐射发光二极管 ALGAAS 输出功率 分子束外延 MBE技术 多量子阱 

分 类 号：TN312.8[电子电信—物理电子学] TG174.4[金属学及工艺—金属表面处理]