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作 者:林启敬[1] 赵玉龙[1] 蒋庄德[1] 王鑫垚[2] 王伟忠[1]
机构地区:[1]西安交通大学机械制造系统工程国家重点实验室,西安710049 [2]西安石油大学,西安710065
出 处:《微纳电子技术》2009年第4期231-235,共5页Micronanoelectronic Technology
基 金:国家自然科学计划资助项目(60776048);国家863项目(2007AA04Z325)
摘 要:为满足三维微力测量的需求,以MEMS体硅压阻工艺技术为基础,研制了一种基于微探针形式,具有μN级三维微力测量和传感能力的半导体压阻式三维微力硅微集成传感器。传感器采用相互迟滞的4个单端固支硅悬臂梁,支撑中间的与微力学探针结合在一起的质量悬块的结构形式,在4mm×4mm的硅基半导体芯片上用MEMS体硅工艺集成而成。通过ANSYS数值仿真的方法分析了三维硅微力传感器结构的应力特点,解决了三维微力之间的相互干扰问题,并对传感器性能进行了测试。结果表明,其X、Z方向的线性灵敏度分别为0.1682、0.0106mV/μN,最大非线性度分别为0.19%FS和1.1%FS。该传感器具有高灵敏度、高可靠性、小体积、低成本等特点。A three-axis micro silicon probe force sensor based on MEMS technology was presented, and the sensing micro force of that can be up to the μN degree. The three-axis micro force sensor was designed with four silicon beams supporting the seismic mass combining with a micro-probe. The three-axis micro silicon force sensor was fabricated on SOI wafers by using MEMS bulk-micromachining technology, in which the die size is about 4 mm×4 mm. The finite element method (FEM) simulation software (ANSYS) was used to simulate the stress distribution of the force sensor structure and the interference problem between the three-axis micro-forces was resolved. The characteristics measured results show that the micro force sensor has good output characters. The X-axis and the Z-axis sensitivity of the sensor are 0. 168 2 mV/μN and 0.010 6 mV/μN and their non-linearities of the output voltage are 0. 19%FS and 1. 1%FS, respectively. With high sensitivity, high reliability, small volume, and low cost, the three- axis micro force sensor will be widely used in the field of micro force measurements.
分 类 号:TH703[机械工程—仪器科学与技术] TP212[机械工程—精密仪器及机械]
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