低温PECVD法制备半导体的复合钝化膜  

Preparation Compound Passivation Film of Semiconductor by Low Temperature PECVD Means

作　　者：刘冰[1,2] 李宁[1,2] 

机构地区：[1]济南市半导体元件实验所 [2]济南市新技术研究所

出　　处：《山东电子》1998年第2期35-36,共2页Shandong Electronics

摘　　要：本文主要是以ＳｉＨ４、Ｎ２Ｏ和Ｓｉ３Ｈ４、ＮＨ３、Ｎ２作为气体源，在平行板电容耦合式淀积设备上，采用等离子增强化学气相淀积（ＰＥＣＶＤ）法制备ＳｉＯ２－Ｓｉ３Ｎ４复合钝化膜。The article' s main content is preparation SiO2-Si3N4 compound passivation film by plasma enhance chemical vapour gas phase deposition ( PECVD ) means, of SiH4 , N2O and Si3H4. , NH3,N2etc.for gas source on parallel board condenser coupled model deposition installation.

关 键 词：钝化 淀积 腐蚀 复合纯化膜 半导体器件 PECVD法 

分 类 号：TN305.2[电子电信—物理电子学]