MPCVD掺硼金刚石薄膜的制备及Ti/BDD电极上对硝基酚的阳极氧化测试(英文)  

Synthesis of Boron Doped Diamond Films by MPCVD and Anodic Oxidation of p-nitrophenol on Ti/BDD Electrode

作　　者：魏俊俊[1] 贺琦[1] 高旭辉[1] 吕反修[1] 陈广超[1] 朱秀萍[2] 倪晋仁[2] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083 [2]北京大学环境资源工程学院,北京100871

出　　处：《人工晶体学报》2009年第2期422-425,共4页Journal of Synthetic Crystals

摘　　要：采用微波等离子体技术在CH4-H2-C2H6气体条件下制备了钛基掺硼金刚石薄膜。四点探针法测得薄膜电阻率在零掺杂时为1×1012Ω·cm,当反应气源中B/C上升为5×10-3时电阻率降至5×10-3Ω·cm。扫描电镜显示掺硼金刚石具有完整晶型和致密结构。拉曼光谱观察到金刚石结构在掺杂前后发生明显改变。采用循环伏安测试了Ti/BDD电极的电化学参量,并与PbO2,Sn-Sb and PbO2-Er三种电极进行阳极氧化对-硝基酚的对比实验。结果表明,在Ti/BDD电极上,对-硝基酚的总有机碳去除率接近100%,远高于其它三种电极。Boron doped diamond films on Ti substrates were prepared by microwave plasma chemical vapor deposition（MPCVD） in the reactant gas of H2-CH4-B2H6. Resistivity of the undoped and doped films was measured by the 4-probe measurement method, which reduced from 1×10^12 -5×10^-3 Ω·cm with the increasing of the atomic ratio B/C from 0 to 5×10^-3. Scanning electron microscope and Raman spectroscopy were used to characterize the morphology and microstructure of these films. Electrochemical behavior of BDD electrode was tested by Cyclic-voltammetry. p-nitrophenol, a common pollutant, was electrolyzed by using the BDD electrodes, as well as the PbO2, Sn-Sb and PbO2-Er electrodes as anode. The comparison of the removal of the total organic carbon using those electrodes shown above demonstrated that the Ti/BDD electrode producing a TOC decrease of approximately 100% has the best electrochemical property.

关 键 词：Ti/BDD电极 微波等离子体 化学气相沉积 对-硝基酚 阳极氧化 

分 类 号：TB43[一般工业技术]