Si_(1-x)Ge_x:C缓冲层的生长温度对Ge薄膜外延生长的影响  

Effects of Si_(1-x)Ge_x:C buffers' Growth Parameters on Ge films by Chemical Vapor Deposition

作　　者：葛瑞萍[1] 韩平[1] 吴军[1] 王荣华[1] 俞斐[1] 赵红[1] 俞慧强[1] 谢自力[1] 张荣[1] 郑有炓[1] 

机构地区：[1]南京大学物理学系江苏省光电信息功能材料重点实验室,江苏南京210093

出　　处：《中国激光》2009年第5期1205-1208,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60721063);国家973计划(2006CB604907);高等学校博士学科点专项科研基金(20050284004)资助课题

摘　　要：用化学气相淀积方法,在Si(100)衬底上生长Si1-xGex:C合金作为缓冲层、继而外延生长了Ge晶体薄膜,用X射线衍射(XRD)、俄歇电子能谱(AES)、拉曼(Raman)衍射光谱等对所得到的样品进行了表征测量,着重研究了Si1-xGex:C缓冲层生长温度对样品结构特征的影响。结果表明:Si1-xGex:C缓冲层中的Ge原子浓度沿表面至衬底方向逐渐降低,其平均组分随着生长温度的升高而降低,这与较高生长温度(760～820℃)所导致的原子扩散效应相关;在Si1-xGex:C缓冲层上外延生长的Ge薄膜具有单一的晶体取向,薄膜的晶体质量随着温度的升高而降低。In this work, Ge films have been deposited on Si （100） substrates with the Si1-xGex：C buffer by chemical vapor deposition method. X-ray diffraction, scanning electron microscopy and Raman diffusion spectra were applied to characterize the Ge/Si1-xGex：C/Si samples. The results show that the concentration of Ge atoms in Si1-xGex：C buffer declines gradually from the surface to the substrate and the average Ge content in the Si1-xGex：C buffer decreases while the growth temperature of the buffer increasing, this is related to the diffusing of Ge atoms due to the higher growth temperature （780-820℃）. Ge films grown on the Si1-xGex：C buffer have only one crystal orientation and the crystal quality of Ge films decreases while the growth temperature increases.

关 键 词：Ge薄膜 Si1-xGex:C缓冲层 化学气相淀积 生长温度 

分 类 号：O436[机械工程—光学工程]