新型功率器件SON-LDMOS的设计和研究  

Design and Research of a Novel High Voltage Power Device:SON-LDMOS

作　　者：高正鑫[1] 程秀兰[1] 

机构地区：[1]上海交通大学微电子学院,上海200240

出　　处：《电子器件》2009年第2期291-295,共5页Chinese Journal of Electron Devices

摘　　要：本文提出了一种新型的对称式SON LDMOS功率器件。在对器件击穿电压进行解析分析的基础上,利用SilvacoTCAD仿真软件Atals验证了漂移区设计对器件击穿电压的影响,证明了峰值击穿电压的存在。并且对比分析了SON LD-MOS与SOI LDMOS击穿电压和寄生电容方面的优劣,研究表明SON LDMOS在击穿电压上比SOI LDMOS器件提高了近3倍,并且其寄生电容也较小,这为SON LDMOS在功率方面的应用提供了部分理论支持。A novel power device-Symmetrical SON-LDMOS was designed and proposed. Based on analytical approach and Atalas Device Simulation, the effects of key structure factors, such as drift length and doping profile, on breakdown voltage of the device were analyzed, testifying the peak breakdown voltage. And comparing with conventional SOI-LDMOS and patterned SOI-LDMOS, it was found SON-LDMOS has better characteristics in breakdown-voltage, leakage current and parasitic capacitance. Breakdown voltage of SON LDMOS is 3 times larger than of SOI LDMOS, and parasitic capacitance in SON LDMOS is also smaller. All those provide part support for its capability in power application.

关 键 词：SOI SON LDMOS 击穿电压 

分 类 号：TN43[电子电信—微电子学与固体电子学]