SiGe HBT的热载流子效应评价  

Evaluation of Hot Carrier Effect of SiGe HBT

作　　者：林晓玲[1] 孔学东[2] 恩云飞[2] 章晓文[2] 姚若河[1] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]工业和信息化部电子第五研究所电子元器件可靠性物理及其应用技术国家级重点实验室,广东广州510610

出　　处：《华南理工大学学报（自然科学版）》2009年第5期23-26,42,共5页Journal of South China University of Technology(Natural Science Edition)

基　　金：模拟集成电路国家重点实验室开放基金资助项目(51439030105DZ1504)

摘　　要：电压加速退化试验方法(OCSAM;EB结反偏)常用于评价硅锗异质结晶体管(SiGe HBT)的热载流子效应,但晶体管在高电压、低电压分别作用下所产生的的失效机理并不相同,且耗时长.文中采用电流加速应力试验方法(FCSAM;EB结反偏、CB结正偏),评价SiGe HBT在热载流子效应作用下的可靠性,研究施加应力前后SiGe HBT器件电特性的变化,分析了电特性退化的原因.结果表明:随应力施加时间的增加,SiGe HBT的电流放大系数逐步退化;与传统的电压加速退化试验方法相比,FCSAM显著缩短了试验时间,能对SiGe HBT的长期可靠性进行有效预测.The hot carrier effect （HCE） of SiGe heterojunction bipolar transistor （HBT） is generally rneasured using the voltage-accelerated degradation method at high reverse emitter-base （EB） voltages with open-circuit col- lector （OCSAM）. However, when OCSAM is employed, the failure mechanism of SiGe HBT at high voltages is dif- ferent from that at low voltages, and the time cost is high. In order to solve these problems, the HCE reliability evaluation of SiGe HBT is carried out using the current-accelerated stress method at low reverse EB voltages and high stress current achieved by forward-biasing the collector-base （CB） junction （FCSAM）. The variation of elec- trical characteristics before and after the application of stress is investigated and the degradation mechanism of elec- trical characteristics is analyzed. The results show that, with the increase of applying time of stress, the current gain gradually degrades. As compared with the conventional voltage-accelerated method OCSAM, FCSAM signifi- cantly saves the test time and can effectively predict the long-term reliability of SiGe HBT.

关 键 词：硅锗异质结晶体管 电流加速 可靠性 热载流子效应 

分 类 号：TN322.8[电子电信—物理电子学]