X射线回摆曲线定量检测SI-GaAs抛光晶片的亚表面损伤层厚度  

Quantitative Measurement of Subsurface Damage Layer Thickness in Polished SI GaAs Wafers by X Ray Rocking Curve FWHM

作　　者：曹福年[1] 卜俊鹏[1] 吴让元[1] 郑红军[1] 惠峰[1] 白玉珂[1] 刘明焦[1] 何宏家[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第8期635-638,共4页半导体学报（英文版）

摘　　要：本文通过测量ＳＩ－ＧａＡｓ抛光晶片及其本体（腐蚀了晶片的亚表面损伤层）的Ｘ射线回摆曲线ＦＷＨＭ，与抛光晶片的ＴＥＭ观测相结合，作出晶片回摆曲线ＦＷＨＭ的比率Ｒ与ＴＥＭ观测的晶片亚表面损伤层厚度Ｄ的关系曲线，建立了一种定量检测ＳＩ－ＧａＡｓ抛光晶片的亚表面损伤层厚度技术，文中将对这种技术进行描述并作讨论．Abstract A quantitative measurement technique of subsurface damage layer thickness in polished SI GaAs wafers has been obtained by combining X ray rocking curve FWHM with TEM observations. It is given that the rate ( R ) of X ray rocking curve FWHM of the polished SI GaAs wafer and its body (subsurface damage layer is etched) correlates with the thickness( D ) of the same polished wafers subsurface damage layer observed by TEM. In this paper, the technique is described and discussed.

关 键 词：SI-砷化镓 抛光晶片 亚表面损伤层 定量检测 

分 类 号：TN304.23[电子电信—物理电子学] TN304.07