衬底温度对ZnO：Al薄膜结构和性能的影响  

Effects of Substrate Temperature on Structure and Properties of ZnO:Al Thin Films

作　　者：徐玮[1] 于军[1] 王晓晶[1,2] 袁俊明[1] 雷青松[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]湖北省光伏工程技术研究中心,武汉430074

出　　处：《半导体技术》2009年第7期665-668,共4页Semiconductor Technology

基　　金：国家自然科学基金重大资助项目(90407023)

摘　　要：利用射频磁控溅射法采用氧化锌铝(98%ZnO+2%Al2O3)为靶材在普通载玻片上制备了ZAO(ZnO:Al)薄膜,研究了衬底温度对薄膜晶体结构,电学和光学性能的影响。利用X射线衍射仪、场扫描电镜对薄膜的结构及表面形貌进行了分析,利用分光光度计和电阻测试仪分别测试了薄膜的光电学性能。结果表明,衬底温度对薄膜结构及光电学性能影响最大。溅射功率120W、衬底温度300℃、工作气压0.6Pa制得的薄膜具有良好的光电学性能(可见光平均透过率为79.49%(考虑衬底的影响,电阻率为4.99×10-2Ω.cm)。Thin films of transparent conductive Al doped ZnO was deposited on glass substrate by RF magnetron sputtering method with target of AlZnO （98% ZnO ＋ 2% Al2O3 ）, the effects of substrate temperature on structure and optical and electronical properties of ZnO ： Al thin films were investigated by XRD, SEM, UV-visble spectrophotometry and four-point probe method. Experimental results indicate that substrate temperature affects the structure and properties of the thin films considerably. The films prepared at substrate temperature of 300 ℃ with RF power of 120 W and working pressure of 0.6 Pa have good optical and electrical properties （average transmittance of 79.49 % in the range of visible light and resistivities of 4.99 ×10^-2Ω·cm） .

关 键 词：磁控溅射 陶瓷靶材 电阻率 透过率 ZAO薄膜 

分 类 号：TN305.92[电子电信—物理电子学]