常温溅射DLC膜的工艺研究  

Study on DLC Films Prepared by Sputtering Technology at Room Tempreture

作　　者：吴小丽[1] 熊长新[1] 李钱陶[1] 何光宗[1] 

机构地区：[1]华中光电技术研究所-武汉光电国家实验室,湖北武汉430074

出　　处：《光学与光电技术》2009年第4期30-32,共3页Optics & Optoelectronic Technology

摘　　要：常温下,采用磁控溅射技术成功地在Ge基底上制备了类金刚石膜,并研究了溅射功率、碳氢气体与氩气流量比、溅射频率、基底负偏压等工艺参数对类金刚石膜沉积速率的影响和薄膜的光学性能。结果表明:溅射功率、溅射频率、碳氢气体与氩气流量比对沉积速率有显著的影响。沉积速率随着溅射功率的增大而增大,随着溅射频率的减小而增大。随着碳氢气体与氩气流量比、基底负偏压的增大沉积速率先增大后降低。制备的类金刚石膜具有较宽的光谱透明区,Ge基底单面沉积的类金刚石膜其峰值透过率最高达到63.99%。Diamond-like carbon （DLC） films are successfully deposited on Ge substrates by magnetron sputtering technique at room temperature. The effects of processing parameters including sputtering power, ratio of hydrocarbon and argon, sputtering frequency and substrate bias voltage on the deposition rate have been studied. Optical performance also has been studied. The experimental results show that the effects of sputtering power, ratio of hydrocarbon and argon,sputtering frequency on the deposition rate of films are remarkable. The deposition rate increases as sputtering power rising and sputtering frequency decreasing. With the increase of gas-flow rate and substrate bias voltage, the deposition rate has maximum value. DLC films have wide transparency region and 63. 99% of transmittance.

关 键 词：磁控溅射 类金刚石膜 沉积速率 透过率 

分 类 号：O484.41[理学—固体物理]