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作 者:袁远[1] 顾艳妮[1] 李志炜[1] 张鉴[1] 袁长胜[1] 葛海雄[1] 陈延峰[1]
出 处:《南京大学学报(自然科学版)》2009年第4期517-522,共6页Journal of Nanjing University(Natural Science)
基 金:国家高技术研究发展计划(2007AA03Z334)
摘 要:采用纳米压印技术作为制备亚微米周期光栅图案的核心技术,并结合反应离子刻蚀,电子束蒸镀,微电镀,紫外光刻,湿法刻蚀成功制作了面积为5 mm×8 mm、周期为200 nm、占空比近1∶1的大面积金自支撑透射光栅.首先利用紫外光固化纳米压印技术和反应离子刻蚀在高分子胶层上复制出石英模板上的纳米光栅结构,然后用微电镀技术制备出金光栅.为了获得具有较深槽深的光栅图形,采用了纳米压印双层胶工艺体系.此工艺利用了纳米压印技术分辨率高、效率高的优点,并且可以制备出剖面陡直、对比度高的高分辨率纳米光栅线条.最后用紫外光刻,微电镀和湿法腐蚀制作出支撑结构,获得金自支撑透射光栅.200nm period gold free-standing transmission gratings(TG),with an area of 5mm×8mm and a line-space ratio of 1∶1,are successfully fabricated by nanoimprint lithography(NIL) as the key technology of sub-micron period grating pattern fabrication,combining with reactive ion etching(RIE),electroplating,photolithography,and wet etching.In the processes,the imprint resist with well-defined three dimensional relief structures is patterned by UV-NIL and RIE,and then by electroplating to fabricate gold gratings.To pattern high aspect ratio gratings,a double layer resist system is used to amplify low aspect ratio patterns formed in the top film into high aspect ratio patterns in the sub layer through a selective etching process.This process allows us to achieve grating patterns with high resolution,high aspect ratio and vertical cross section.The larger period support structures are fabricated by UV contact photolithography with positive photoresist and gold electroplating.After that,the region of the silicon wafer under the grating patterns is removed by wet etching to leave gold free-standing transmission gratings.
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