SONOS非易失性存储器件研究进展  

Progress of SONOS Nonvolatile Memory Device

作　　者：曾俊[1] 傅仁利[1] 宋秀峰[1] 张绍东[1] 钱凤娇[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《电子与封装》2009年第8期24-30,共7页Electronics & Packaging

摘　　要：随着半导体存储器件的小型化、微型化,传统多晶硅浮栅存储因为叠层厚度过大,对隧穿氧化层绝缘性要求过高而难以适应未来存储器的发展要求。最近,基于绝缘性能优异的氮化硅的SONOS非易失性存储器件,以其相对于传统多晶硅浮栅存储器更强的电荷存储能力、易于实现小型化和工艺简单等特性而重新受到重视。文章论述了SONOS非易失性存储器件的存储原理和存储性能的影响因素研究进展,并在材料、工艺与结构设计等方面对SONOS存储器件性能改进的研究进展情况进行了分析和讨论。With the miniaturization and micromation of semiconductor memories, conventional polysilicon floating-gate memories are unable to meet the developments of future memories, because of its high stack height and extreme good insulating performance requirements of the tunnel oxide. Recently, nonvolatile memory device based on excellent insulator silicon nitride, have been regarded again because of its better charge storing capability, continual size minimizing speciality and simple technics comparing with conventional polysilicon floating-gate memory device. The progresses in storage principle of SONOS nonvolatile memory device and the influencing factors of memory properties are discussed in this paper, studies on improving the storage properties by technics, materials and structure designs are also introduced.

关 键 词：存储 硅/二氧化硅/氮化硅/二氧化硅/硅 氮化硅 非易失性 势阱 纳米晶 

分 类 号：TN303[电子电信—物理电子学]