Au／SiO2复合纳米颗粒膜及SiO2纳米线的制备  

Fabration of the SiO2 Nanowires Using Au Catalysts Template Prepared by Magnetron Sputtering

作　　者：李玉国[1] 卓博世[1] 张敬尧[1] 崔传文[1] 张月甫[1] 扬爱春[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,山东济南250014

出　　处：《纳米科技》2009年第4期35-37,41,共4页

基　　金：基金项目：教育部留学回国人员科研启动基金资助

摘　　要：室温下用磁控溅射法在Si（111）衬底上生成Au／SiO2复合纳米颗粒膜，并分不同温度进行退火处理。1000℃退火时自组装生成空间分布均匀（直径约为70nm）的Au纳米点，从而用自组装生长方法制备了生长一维纳米材料的模板，然后，将Au催化剂模板在1100℃下退火处理，生成纳米线，SEM和TEM测试，制备的SiO2纳米线直径约为100nm，长度约为4μm，表面光滑，直且粗细均匀。Au/SiO2 composite nanoparticle films were prepared on Si （111） substrates by magnetron sputtering at room temperature,then were annealed at different temperatures.Experiment results indicate that Au nanodots of about 70 nm in diameter well-distributed in space are formed by self-assembly at 1000℃, which can be used as the template to prepare one-dimensional nanomaterials.When Au catalysts template was annealed at 1100℃, SiO2 nanowircs was achieved. SEM and TEM reveal that the SiO2 nanowires have a vertical and smooth surface with diameters of around 100nm and lengths of about 4 microns. The growth mechanism is discussed briefly.

关 键 词：磁控溅射 模板 SiO2纳米线 

分 类 号：O484.5[理学—固体物理]