ZnO∶Ti透明导电薄膜的制备与光电性能研究  

Deposition and photoelectric properties of transparent conducting titanium-doped zinc oxide films

作　　者：刘汉法[1] 袁玉珍[1] 张化福[1] 袁长坤[1] 类成新[1] 

机构地区：[1]山东理工大学理学院,山东淄博255049

出　　处：《电子元件与材料》2009年第10期41-43,53,共4页Electronic Components And Materials

基　　金：山东理工大学创新团队支持计划资助项目(No.2006)

摘　　要：采用直流磁控溅射法,在水冷7059玻璃衬底上制备了具有高透射率和相对低电阻率的掺钛氧化锌(ZnO∶Ti)透明导电薄膜,研究了溅射偏压对ZnO∶Ti薄膜结构、形貌和光电性能的影响。结果表明,ZnO∶Ti薄膜为六角纤锌矿多晶结构,具有c轴择优取向。溅射偏压对ZnO∶Ti薄膜的结构和电阻率有重要影响。当溅射偏压为10V时,电阻率具有最小值1.90×10–4?.cm。薄膜具有良好的附着性能,可见光区平均透射率超过90%。该ZnO∶Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。Transparent conducting ZnO ： Ti thin films with high transparency and relatively low resistivity were successfully prepared on 7059 water-cooled glass substrate by DC magnetron sputtering. The effects of sputtering bias-voltage on the microstructure, morphology and photoelectric properties ofZnO ： Ti thin films were investigated. The results indicate that the ZnO： Ti thin film has a hexagonal wurtzite polycrystalline structure with the c-axis preferential orientation. The sputtering bias-voltage has an important effect on the microstructure and resistivity of ZnO ： Ti thin films. When the sputtering bias-voltage is 10 V, it is obtained that the lowest resistivity is 1.90×10^-4Ω·cm. All the films prepared with different sputtering blas-voltage show good adhesion capability and present a high average transmittance of above 90% in the visible region. ZnO：Ti thin films with high transparency and relatively low resistivity deposited at low temperature can be used as transparent electrode in thin film solar cells and liquid crystal display.

关 键 词：ZnO∶Ti膜 透明导电薄膜 偏压 磁控溅射 

分 类 号：TN304.2[电子电信—物理电子学] TN304.055