反应溅射SiO_xN_y栅介质薄膜的成分及C-V特性研究  

Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film

作　　者：徐文彬[1] 王德苗[2] 

机构地区：[1]集美大学信息工程学院,厦门361021 [2]浙江大学信电系,杭州310027

出　　处：《材料导报》2009年第20期11-12,16,共3页Materials Reports

基　　金：集美大学预研基金(4411-C60825);国家自然科学基金(50172042)

摘　　要：在前期工作基础上,研究了不同反应气体组合条件下SiOxNy栅介质薄膜的反应溅射制备。反应气体的不同组合首先导致薄膜氮氧比以及沉积速率的不同,并进一步导致薄膜电学性能的差异。对薄膜电容-电压特性的分析表明,沉积速率降低会使薄膜体缺陷密度减小,而氮含量的减少则有助于提高薄膜界面质量。最终结果显示,采用合适的反应气体组合(QN2=1.0sccm,QO2=1.0sccm)制得的SiOxNy薄膜具有较低的体缺陷密度和较好的界面质量,适合于MOS栅介质领域的应用。Based on our previous work, reactive sputtering of SiOxNy films under the conditions of different reactive gases mixture are studied. Variation of the reactive gases mixture has reasulted in different nitrogen-oxygen ratio with different deposition speed, which further leads to the differences of electrical properties. Analysis of the capacitance-voltage characteristics shows that the fall of deposition speed can decrease the bulk defect density in the films deposited, while the decrease of nitrogen content can be helpful for the improvement of interface quality. Final results indicate that SiOxNy films deposited with the reactive gases mixture（QN2= 1.0sccm, Qo2=1.0sccm） exhibit lower dielectric defect density and better interface quality, suggesting its good prospect in the MOS gate dielectric applications.

关 键 词：氮氧化硅 氮氧比 C-V特性 栅介质 

分 类 号：TN304.21[电子电信—物理电子学] TN305.92