基于Au/Au直接键合的高亮度ODRLED  

High Brightness ODR LED Based on Au/Au Wafer Bonding

作　　者：李一博[1] 郭霞[1] 关宝路[1] 揣东旭[1] 沈光地[1] 

机构地区：[1]北京工业大学北京市光电子技术实验室,北京100124

出　　处：《固体电子学研究与进展》2009年第3期399-402,449,共5页Research & Progress of SSE

基　　金：国家自然科学基金(No60506012);国家重点基础研究发展计划项目(973计划:No2006CB604902);霍英东基金(No101062);国家高技术研究发展计划(批准号:2006AA03A121);教育部新世纪优秀人才计划项目(批准号:39002013200801);北京市青年骨干教师培养计划项目(NoJ2002013200801)

摘　　要：提出利用Au/Au直接键合制作高亮度全方位反光镜(ODR)LED的新工艺。工艺采用Si做转移衬底,氧化铟锡(ITO)做窗口层和缓冲层,在0.35mPa压力,260°C的低温下实现Au/Au固相直接键合。直接键合后,Al-GaInP有源区与Si衬底结合牢固完整,保证了全方位反光镜的性能。在正向电流20mA下,键合ODR结构LED的正向压降是常规吸收衬底LED的80%,光输出功率和流明效率是常规吸收衬底LED的1.5倍和2.1倍。A high efficient AlGaInP light emitting diode（LED）with omni-directional reflector（ODR）fabricated by Au/Au direct wafer bonding was proposed,in which Si was used as transfer substrate,and tin doped indium oxide（ITO）was used as window layer and buffer layer.By using Au/Au as bonding interface,we removed the GaAs substrate of the AlGaInP wafer and successfully bonded it to Si substrate under the pressure of 0.35 mPa,temperature of 260°C.On the microscope and scanning electron microscope（SEM）pictures,the bonding structure is complete and no crack on the interface, and the ODR structure is protected. Comparing with conventional GaAs absorbing substrate LED, the forward voltage is 80% lower and the output power and luminous efficiency is 1.5 and 2. 1 times higher respectively.

关 键 词：铝镓铟磷 硅衬底 氧化铟锡 全方位反光镜 直接键合 发光二极管 

分 类 号：TN304[电子电信—物理电子学] TN312.8