大电流密度下欧姆接触退化机理的研究  

Study on Ohmic Contact Degradation under High Current Density

作　　者：张跃宗[1,2] 冯士维[2] 郭春生[2] 张光沉[2] 庄四祥[2] 苏蓉[2] 白云霞[2] 吕长志[2] 

机构地区：[1]深圳信息职业技术学院,深圳518029 [2]北京工业大学电子信息与控制学院,北京100124

出　　处：《固体电子学研究与进展》2009年第3期469-472,共4页Research & Progress of SSE

基　　金：国家863项目(编号2006AA03A112)

摘　　要：对大电流密度下欧姆接触的结构进行了改进,采用只对接触区域老化而其它区域非破坏性的结构特点,保证测量数据的真实有效性。工艺制备中采取多次SiO2铺垫多次光刻技术解决了引线电极断裂的可能。通过施加达到或超过105A/cm2电流密度,利用文中结构测得比接触电阻早期快速失效,且随电流密度增加退化加剧,对样品老化前后进行能谱分析得知,大电流密度下接触层中Al离子发生了扩散从而破坏了良好接触。In this paper the traditional Transmission Line Method（TLM）ohmic contact structure is innovated,by only aging the contacts areas not others.The new method can ensure the reliability and validity when high current density is applied on the structure.Ensploying muoti-SiO2 deposition,it reduces effectively the probability of leading wire fracture.The results show after applying high current density that the contact resistivity is rapidly failure early period and degenerates dramatically with time and current density. From the spectrum, the good ohmic contacts are destroyed due to Al ion diffusion in contact layer under high current density.

关 键 词：大电流密度 欧姆接触 比接触电阻 

分 类 号：TN306[电子电信—物理电子学] TN305