垂直结构GaN基LEDs热压键合应力损伤分析  

Stress Damage on Vertical Structure GaN-Based LEDs

作　　者：刘志强[1] 王良臣[1] 伊晓燕[1] 郭恩卿[1] 王国宏[1] 李晋闽[1] 

机构地区：[1]中科院半导体所照明研发中心,北京100083

出　　处：《半导体技术》2009年第10期1011-1013,共3页Semiconductor Technology

基　　金：国家自然科学基金重点项目(60835001)

摘　　要：热压键合是垂直结构LED制备的关键工艺步骤,通过TEM,PL,Raman等测试手段,探讨热压键合造成的应力损伤、GaN材料缺陷、LED内量子效率以及反向漏电间的内在联系,研究以键合引起的应力诱导垂直结构GaN基LED光电特性的退化机制,探讨应力损伤对垂直结构GaN基LED光电特性的影响。实验结果表明,热压键合过程会在GaN材料内产生GPa量级的残余应力,在量子限制strark效应作用下,GaN材料辐射复合效率发生明显退化;同时热压键合应力还会诱发GaN材料位错密度的增加,最终导致LED反向漏电增大。Wafer bonding is the key process on the fabrication of vertical structure GaN-based LEDs. By TEM, PL and Raman, the relationship among thermal stress, dislocation density, quantum efficiency were analyzed. Furthermore the degradations of LEDs induced by thermal stress were studied. The results indicate that the residual stress in GPa magnitude is generated in the bonding process, and due to the quantum-stark effect the quantum efficiency decreases dramatically. At the same time, the dislocation density increases induced by thermal stress, and the reverse-bias leakages increase.

关 键 词：热压键合 氮化镓 应力损伤 反向漏电 

分 类 号：TN312.8[电子电信—物理电子学]