基片温度对掺磷a-Si:H薄膜光电性能的影响  

Influence of Substrate Temperature on the Electronic and Optical Properties of Phosphorus-doped a-Si:H Films

作　　者：金鑫[1] 李远程[1] 邓坤[1] 陈宇翔[1] 李伟[1] 

机构地区：[1]电子科技大学光电信息学院,成都610054

出　　处：《实验科学与技术》2009年第5期10-13,72,共5页Experiment Science and Technology

摘　　要：采用射频等离子增强化学气相沉积(RF-PECVD)方法制备磷掺杂氢化非晶硅(a-Si:H)薄膜。研究了不同基片温度对薄膜沉积速率、电阻率、折射率以及光学带隙等的影响。结果表明:a-Si:H薄膜的沉降速率随着基片温度的升高而增大;薄膜的电阻率随着基片温度的增加而迅速下降,并在250℃达到最低值;a-Si:H薄膜的折射率随着基片温度的增加而增大,但光学带隙随着基片温度的增加而减小。Phosphorus-doped hydrogenated amorphous silicon （a-Si：H） thin films are deposited by radio frequency plasma enhanced chemical vapor deposition （RF-PECVD） . The deposition rate, resistivity, refractive index and optical gap of the a-Si： H films are investigated as functions of the substrate temperatures. The results show that the deposition rate increases with increasing substrate temperature, but the resistivity decreases with increasing substrate temperature and reaches to a minimum value at 250℃. It is also found that the refractive index increases with increasing substrate temperature, while the optical band gap decreases with increasing snhstrate temperature.

关 键 词：基片温度 A-SI:H薄膜 RF-PECVD 电阻率 光学性能 

分 类 号：O43[机械工程—光学工程] TN304.055[理学—光学]