深亚微米全耗尽SOI BJMOSFET的二维电流模型  

2-D Current Model of Fully Depleted SOI BJMOSFET

作　　者：张燕[1] 高有堂[1] 曾云[2] 

机构地区：[1]南阳理工学院,河南南阳473004 [2]湖南大学,长沙410082

出　　处：《微电子学》2009年第5期684-688,共5页Microelectronics

摘　　要：建立了深亚微米全耗尽SOI BJMOSFET器件的二维电流模型;运用HSPICE软件,模拟得到其电流-电压特性曲线。与相同条件下的全耗尽SOI MOSFET相比,该新型SOI器件具有更大的电流输出,是一种直流性能优异的新型SOI器件。A two-dimensional current model of deep-submicron fully-depleted SOI BJMOSFET was established. I-V characteristic curves from HSPICE simulation indicated that, under identical conditions, the proposed novel SOI device had larger output current, compared with deep-submicron fully depleted SOI MOSFET. It has been proved to be a new type of SOl device with excellent DC performance.

关 键 词：深亚微米 全耗尽 SOI BJMOSFET 二维电流模型 

分 类 号：TN305[电子电信—物理电子学]