碳化硅(SiC)器件制造工艺中的干法刻蚀技术  

Dry etching technique for silicon carbide (SiC) in silicon carbide device fabrication

作　　者：柴常春[1] 杨银堂[1] 朱作云[1] 李跃进[1] 

机构地区：[1]西安电子科技大学微电子研究所

出　　处：《西安电子科技大学学报》1998年第5期659-663,共5页Journal of Xidian University

基　　金：国家自然科学基金

摘　　要：简述了在ＳｉＣ材料半导体器件制造工艺中，对ＳｉＣ材料采用干法刻蚀工艺的必要性．总结了近年来ＳｉＣ干法刻蚀技术的工艺发展状况．C SiC is a promising semiconductor for high temperature because of its high mechanical hardness, chemical stability, and thermal stability. In SiC device fabrication process, dry etching technique for SiC replaces the conventional wet etching process to meet the needs of the patterns etching quality. In this paper, the developments of dry etching technique for SiC in recent years are introduced.

关 键 词：碳化硅 干法刻蚀 制造工艺 

分 类 号：TN304.24[电子电信—物理电子学] TN305.7